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Proceedings Paper

Optical emission of silicon plasma induced by femtosecond double-pulse laser
Author(s): Anmin Chen; Xiaowei Wang; Dan Zhang; Ying Wang; Suyu Li; Yuanfei Jiang; Mingxing Jin
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Paper Abstract

In this paper, we present a study on the influence of interpulse delay in laser-induced silicon plasma with femtosecond double-pulse, and two subpulses have different laser energies. The meansured optical emission line collected by a lens is the Si (I) at 390.55 nm. The range of double-pulse interpulse delay is from -150 ps to 150 ps. Unlike the femtosecond double pulses with two same energies, the combination of low + high energies can enhance the spectral emission intensity, while the combination of high + low energies probably reduces the spectral line intensity compared with single-pulse femtosecond laser. The results indicate that the interpulse delay is very important for laser-induced breakdown spectroscopy with femtosecond double-pulse to improve the optical emission intensity.

Paper Details

Date Published: 12 May 2017
PDF: 6 pages
Proc. SPIE 10173, Fourth International Symposium on Laser Interaction with Matter, 101730X (12 May 2017); doi: 10.1117/12.2267969
Show Author Affiliations
Anmin Chen, Jilin Univ. (China)
Xiaowei Wang, Jilin Univ. (China)
Dan Zhang, Jilin Univ. (China)
Ying Wang, Jilin Univ. (China)
Suyu Li, Jilin Univ. (China)
Yuanfei Jiang, Jilin Univ. (China)
Mingxing Jin, Jilin Univ. (China)

Published in SPIE Proceedings Vol. 10173:
Fourth International Symposium on Laser Interaction with Matter
Yongkun Ding; Guobin Feng; Dieter H. H. Hoffmann; Jianlin Cao; Yongfeng Lu, Editor(s)

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