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Proceedings Paper

GaN-based flip-chip parallel micro LED array for visible light communication
Author(s): Shi-Chao Zhu; Li-Xia Zhao; Chao Yang; Hai-Cheng Cao; Zhi-Guo Yu; Lei Liu
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Paper Abstract

In this study, GaN-based flip-chip parallel micro light-emitting diode (μLED) arrays have been fabricated. Compared to a single LED with the same active region area, flip-chip parallel μLED arrays are superior on both modulation bandwidth and light output because of the uniform current spreading, improved heat dissipation, and higher light extraction efficiency. With this structure, an injected current density up to 7900 A/cm2 has been achieved with a modulation bandwidth of ∼227 MHz. Meanwhile, the optical power is above 30 mW, which is more suitable for visible light communication in free space. The influence of resistance-capacitance (RC) time constant and carrier lifetime on the modulation bandwidth of parallel μLED arrays has also been investigated in details. This study will help the design of GaN-based LEDs to both enhance the modulation bandwidth and optical power.

Paper Details

Date Published: 5 January 2017
PDF: 7 pages
Proc. SPIE 10244, International Conference on Optoelectronics and Microelectronics Technology and Application, 102441Y (5 January 2017); doi: 10.1117/12.2267389
Show Author Affiliations
Shi-Chao Zhu, Institute of Semiconductors (China)
Li-Xia Zhao, Institute of Semiconductors (China)
Chao Yang, Institute of Semiconductors (China)
Hai-Cheng Cao, Institute of Semiconductors (China)
Zhi-Guo Yu, Institute of Semiconductors (China)
Lei Liu, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 10244:
International Conference on Optoelectronics and Microelectronics Technology and Application
Shaohua Yu; Jose Capmany; Yi Luo; Yikai Su; Songlin Zhuang; Yue Hao; Akihiko Yoshikawa; Chongjin Xie; Yoshiaki Nakano, Editor(s)

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