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Proceedings Paper

Zn-vacancy related defects in ZnO grown by pulsed laser deposition
Author(s): F. C. C. Ling; C. Q. Luo; Z. L. Wang; W. Anwand; A. Wagner
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Paper Abstract

Undoped and Ga-doped ZnO (002) films were grown c-sapphire using the pulsed laser deposition (PLD) method. Znvacancy related defects in the films were studied by different positron annihilation spectroscopy (PAS). These included Doppler broadening spectroscopy (DBS) employing a continuous monenergetic positron beam, and positron lifetime spectroscopy using a pulsed monoenergetic positron beam attached to an electron linear accelerator. Two kinds of Znvacancy related defects namely a monovacancy and a divacancy were identified in the films. In as-grown undoped samples grown with relatively low oxygen pressure P(O2)≤1.3 Pa, monovacancy is the dominant Zn-vacancy related defect. Annealing these samples at 900 oC induced Zn out-diffusion into the substrate and converted the monovacancy to divacancy. For the undoped samples grown with high P(O2)=5 Pa irrespective of the annealing temperature and the as-grown degenerate Ga-doped sample (n=1020 cm-3), divacancy is the dominant Zn-vacancy related defect. The clustering of vacancy will be discussed.

Paper Details

Date Published: 24 February 2017
PDF: 9 pages
Proc. SPIE 10105, Oxide-based Materials and Devices VIII, 101050F (24 February 2017); doi: 10.1117/12.2267186
Show Author Affiliations
F. C. C. Ling, The Univ. of Hong Kong (Hong Kong, China)
C. Q. Luo, The Univ. of Hong Kong (Hong Kong, China)
Z. L. Wang, The Univ. of Hong Kong (Hong Kong, China)
W. Anwand, Helmholtz-Zentrum Dresden-Rossendorf e. V. (Germany)
A. Wagner, Helmholtz-Zentrum Dresden-Rossendorf e. V. (Germany)

Published in SPIE Proceedings Vol. 10105:
Oxide-based Materials and Devices VIII
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)

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