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Proceedings Paper

I-V characteristics simulation of silicon carbide Ti/4H-SiC Schottky diode
Author(s): P. Panchenko; S. Rybalka; A. Malakhanov; E. Krayushkina; A. Radkov
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Paper Abstract

The simulation of current-voltage characteristics for 4H-SiC Schottky diode with Ti Schottky contact has been carried out with used of TCAD program. Obtained current-voltage characteristics has been analyzed and compared with theoretical and experimental results. It is established that the Schottky diode parameters (forward current, ideality coefficient, Schottky barrier height, breakdown voltage) obtained in proposed model are good agreement with data for such type diodes.

Paper Details

Date Published: 30 December 2016
PDF: 5 pages
Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102240Y (30 December 2016); doi: 10.1117/12.2267088
Show Author Affiliations
P. Panchenko, Bryansk State Technical Univ. (Russian Federation)
S. Rybalka, Bryansk State Technical Univ. (Russian Federation)
A. Malakhanov, Bryansk State Technical Univ. (Russian Federation)
E. Krayushkina, Bryansk State Technical Univ. (Russian Federation)
A. Radkov, Bryansk State Technical Univ. (Russian Federation)


Published in SPIE Proceedings Vol. 10224:
International Conference on Micro- and Nano-Electronics 2016
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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