The results of investigation of a memristor nanostructures based on titanium nanowires fabricated by methods of focused ion beams are presented. The memristor effect in the titanium nanowires is investigated by an AFM in the mode of spreading resistance map. It is shown that the using of FIB milling allows to form conductive channels with different shapes and nanoscale dimensions. The analysis of the I-Vs of Ti nanowire memristor structures shows that the resistivity ratio in the high- and low-resistance states is higher than 10². After a series of measurements determined that memristor structures have a high stability of resistance. The obtained results are most promising for developing the technological processes of the formation of resistive operation memory cells.

Date Published: 30 December 2016
PDF: 5 pages
Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102240T (30 December 2016); doi: 10.1117/12.2267084

Published in SPIE Proceedings Vol. 10224:
International Conference on Micro- and Nano-Electronics 2016
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)