Proceedings Paper
Critical parameters of silicon wafer lamp-based annealing in high power flux of incoherent radiation| Format | Member Price | Non-Member Price |
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Paper Abstract
In the heat system modeling lamp-based annealing in the thermal treatment reactor controlled by the heater temperature and the effective heat exchange coefficient the temperature of the lightly doped silicon wafer is investigated in reactors with the convective and combined heat removal. It is shown that, for every system controlling thermal processes there are critical parameters bounding the region of bistable temperature behavior of the wafer. The dependence of the position of the bistability region on the plane of the controlling parameters on the model of the heater and absorber, the thickness and the doping level of silicon wafer, and also the spectral and integral approaches to the description of the heat exchange process is discussed.
Paper Details
Date Published: 30 December 2016
PDF: 12 pages
Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 1022423 (30 December 2016); doi: 10.1117/12.2267064
Published in SPIE Proceedings Vol. 10224:
International Conference on Micro- and Nano-Electronics 2016
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)
PDF: 12 pages
Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 1022423 (30 December 2016); doi: 10.1117/12.2267064
Show Author Affiliations
Valeriya P. Prigara, Institute of Physics and Technology (Russian Federation)
Vladimir V. Ovcharov, Institute of Physics and Technology (Russian Federation)
Vladimir V. Ovcharov, Institute of Physics and Technology (Russian Federation)
Valery I. Rudakov, Institute of Physics and Technology (Russian Federation)
Alexey L. Kurenja, Institute of Physics and Technology (Russian Federation)
Alexey L. Kurenja, Institute of Physics and Technology (Russian Federation)
Published in SPIE Proceedings Vol. 10224:
International Conference on Micro- and Nano-Electronics 2016
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)
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