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Proceedings Paper

TDR method for determine IC’s parameters
Author(s): V. Timoshenkov; D. Rodionov; A. Khlybov
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Paper Abstract

Frequency domain simulation is a widely used approach for determine integrated circuits parameters. This approach can be found in most of software tools used in IC industry. Time domain simulation approach shows intensive usage last years due to some advantages. In particular it applicable for analysis of nonlinear and nonstationary systems where frequency domain is inapplicable. Resolution of time domain systems allow see heterogeneities on distance ~1mm, determine it parameters and properties. Authors used approach based on detecting reflected signals from heterogeneities – time domain reflectometry (TDR).

Field effect transistor technology scaling up to 30-60nm gate length and ~10nm gate dielectric, heterojunction bi-polar transistors with 10-30nm base width allows fabricate digital IC’s with 20GHz clock frequency and RF-IC’s with tens GHz bandwidth. Such devices and operation speed suppose transit signal by use microwave lines. There are local heterogeneities can be found inside of the signal path due to connections between different parts of signal lines (stripe line-RF-connector pin, stripe line – IC package pin). These heterogeneities distort signals that cause bandwidth decrease for RF-devices. Time domain research methods of transmission and reflected signals give the opportunities to determine heterogeneities, it properties, parameters and built up equivalent circuits.

Experimental results are provided and show possibility for inductance and capacitance measurement up to 25GHz. Measurements contains result of signal path research on IC and printed circuit board (PCB) used for 12GHz RF chips. Also dielectric constant versus frequency was measured up to 35GHz.

Paper Details

Date Published: 30 December 2016
PDF: 6 pages
Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 1022427 (30 December 2016); doi: 10.1117/12.2267058
Show Author Affiliations
V. Timoshenkov, National Research Univ. of Electronic Technology (Russian Federation)
D. Rodionov, National Research Univ. of Electronic Technology (Russian Federation)
A. Khlybov, National Research Univ. of Electronic Technology (Russian Federation)

Published in SPIE Proceedings Vol. 10224:
International Conference on Micro- and Nano-Electronics 2016
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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