Proceedings Paper
The features of CNT growth on catalyst-content amorphous alloy layer by CVD-method| Format | Member Price | Non-Member Price |
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Paper Abstract
This work is devoted to the CVD-synthesis of arrays of carbon nanotubes (CNTs) on Co-Zr-N-(O), Ni-Nb-N-(O), Co- Ta-N-(O) catalytic alloy films from gas mixture of C2H2+NH3+Ar at a substrate temperature of about 550°C.Heating of the amorphous alloy causes its crystallization and squeezing of the catalytic metal onto the surface. As a result, small catalyst particles are formed on the surface. The CNT growth takes place after wards on these particles. It should be noted that the growth of CNT arrays on these alloys is insensitive to the thickness of alloy film, which makes this approach technically attractive. In particular, the possibility of local CNT growth at the ends of the Co-Ta-N-(O) film and three-level CNT growth at the end of more complex structure SiO2/Ni-Nb-N-O/SiO2/Ni-Nb-N-O/SiO2/Ni-Nb-N-O/SiO2 is demonstrated.
Paper Details
Date Published: 30 December 2016
PDF: 8 pages
Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102240L (30 December 2016); doi: 10.1117/12.2267052
Published in SPIE Proceedings Vol. 10224:
International Conference on Micro- and Nano-Electronics 2016
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)
PDF: 8 pages
Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102240L (30 December 2016); doi: 10.1117/12.2267052
Show Author Affiliations
S. Dubkov, National Research Univ. of Electronic Technology (Russian Federation)
S. Bulyarskii, Institute of Nanotechnology of Microelectronics (Russian Federation)
A. Pavlov, Institute of Nanotechnology of Microelectronics (Russian Federation)
A. Trifonov, Research Institute of Physical Problems F.V.Lukina (Russian Federation)
E. Kitsyuk, Scientific-Manufacturing Complex “Technological Ctr.” (Russian Federation)
S. Bulyarskii, Institute of Nanotechnology of Microelectronics (Russian Federation)
A. Pavlov, Institute of Nanotechnology of Microelectronics (Russian Federation)
A. Trifonov, Research Institute of Physical Problems F.V.Lukina (Russian Federation)
E. Kitsyuk, Scientific-Manufacturing Complex “Technological Ctr.” (Russian Federation)
P. Mierczynski, Lodz Univ. of Technology (Poland)
T. Maniecki, Lodz Univ. of Technology (Poland)
R. Ciesielski, Lodz Univ. of Technology (Poland)
S. Gavrilov, National Research Univ. of Electronic Technology (Russian Federation)
D. Gromov, National Research Univ. of Electronic Technology (Russian Federation)
T. Maniecki, Lodz Univ. of Technology (Poland)
R. Ciesielski, Lodz Univ. of Technology (Poland)
S. Gavrilov, National Research Univ. of Electronic Technology (Russian Federation)
D. Gromov, National Research Univ. of Electronic Technology (Russian Federation)
Published in SPIE Proceedings Vol. 10224:
International Conference on Micro- and Nano-Electronics 2016
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)
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