Proceedings Paper
Thermo injecting electrical instability in the AlxGa1-xAs/GaAs heterostructures with tunnel-nontransparent potential barriers| Format | Member Price | Non-Member Price |
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Paper Abstract
Paper presents the results of research of electrical characteristics features of multibarrier AlxGa1-xAs/GaAs heterostructures with tunnel-nontransparent potential barriers. Briefly described constructive-technological features fabricated using molecular beam epitaxy. We measured the quasi-static current-voltage characteristics of test items by electric pulses of duration 10-6 s and a duty cycle of 103. Observed characteristics with a strong section of the negative differential resistance in the current range of several tens of milliampers. It is proposed to use this effect for the generation of terahertz electromagnetic radiation. Briefly stated the theoretical interpretation of the observed phenomena on the basis of quasi-hydrodynamic theory of electron drift.
Paper Details
Date Published: 30 December 2016
PDF: 4 pages
Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102240X (30 December 2016); doi: 10.1117/12.2267032
Published in SPIE Proceedings Vol. 10224:
International Conference on Micro- and Nano-Electronics 2016
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)
PDF: 4 pages
Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102240X (30 December 2016); doi: 10.1117/12.2267032
Show Author Affiliations
S. A. Nikitov, Institute of Radio Engineering and Electronics (Russian Federation)
P. P. Maltsev, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation)
V. A. Gergel, Institute of Radio Engineering and Electronics (Russian Federation)
A. V. Verhovtseva, Institute of Radio Engineering and Electronics (Russian Federation)
N. M. Gorshkova, Institute of Radio Engineering and Electronics (Russian Federation)
P. P. Maltsev, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation)
V. A. Gergel, Institute of Radio Engineering and Electronics (Russian Federation)
A. V. Verhovtseva, Institute of Radio Engineering and Electronics (Russian Federation)
N. M. Gorshkova, Institute of Radio Engineering and Electronics (Russian Federation)
V. V. Pavlovskiy, Institute of Radio Engineering and Electronics (Russian Federation)
V. S. Minkin, Institute of Radio Engineering and Electronics (Russian Federation)
A. A. Trofimov, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation)
A. Yu. Pavlov, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation)
R. A. Khabibullin, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation)
V. S. Minkin, Institute of Radio Engineering and Electronics (Russian Federation)
A. A. Trofimov, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation)
A. Yu. Pavlov, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation)
R. A. Khabibullin, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation)
Published in SPIE Proceedings Vol. 10224:
International Conference on Micro- and Nano-Electronics 2016
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)
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