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Proceedings Paper

Metal-assisted chemical etching of silicon with different metal films and clusters: a review
Author(s): O. Pyatilova; S. Gavrilov; A. Sysa; A. Savitskiy; A. Shuliatyev; A. Dudin; A. Pavlov
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Paper Abstract

In this work we provided a review of the study of MACE (metal-assisted chemical etching) of Si with Ag, Pt, Ni and Au films and clusters. Type and shape of the metal mask play an important role in determination of morphology of the nanostructured layer. It is possible to form both wide range of porous layer and nanowires array. The basic features of the MACE with various types and shape of the metal were revealed.

Paper Details

Date Published: 30 December 2016
PDF: 7 pages
Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 1022405 (30 December 2016); doi: 10.1117/12.2266862
Show Author Affiliations
O. Pyatilova, National Research Univ. of Electronic Technology (Russian Federation)
S. Gavrilov, National Research Univ. of Electronic Technology (Russian Federation)
A. Sysa, National Research Univ. of Electronic Technology (Russian Federation)
A. Savitskiy, National Research Univ. of Electronic Technology (Russian Federation)
A. Shuliatyev, National Research Univ. of Electronic Technology (Russian Federation)
A. Dudin, Institute of Nanotechnology Microelectronics INME (Russian Federation)
A. Pavlov, Institute of Nanotechnology Microelectronics INME (Russian Federation)


Published in SPIE Proceedings Vol. 10224:
International Conference on Micro- and Nano-Electronics 2016
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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