Proceedings Paper
Ensemble Monte Carlo simulation of electron transport in GaAs/AlAs quantum wire structure under the effect of terahertz electric field| Format | Member Price | Non-Member Price |
|---|---|---|
| $17.00 | $21.00 |
Paper Abstract
Ensemble Monte Carlo simulation of electron transport in GaAs/AlAs quantum wire transistor structure is performed. The response of electron drift velocity on the action of harmonic longitudinal electric field is calculated for several values of electric field strength amplitude and gate bias at 77 and 300 K. The periodical electric field has a 1 THz frequency. The nonlinear behaviour of electron drift velocity due to scattering processes is observed.
Paper Details
Date Published: 30 December 2016
PDF: 6 pages
Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102240W (30 December 2016); doi: 10.1117/12.2266775
Published in SPIE Proceedings Vol. 10224:
International Conference on Micro- and Nano-Electronics 2016
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)
PDF: 6 pages
Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102240W (30 December 2016); doi: 10.1117/12.2266775
Show Author Affiliations
Andrei V. Borzdov, Belarusian State Univ. (Belarus)
Vladimir M. Borzdov, Belarusian State Univ. (Belarus)
Vladimir M. Borzdov, Belarusian State Univ. (Belarus)
Vladimir V. V'yurkov, Institute of Physics and Technology (Russian Federation)
Published in SPIE Proceedings Vol. 10224:
International Conference on Micro- and Nano-Electronics 2016
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)
© SPIE. Terms of Use
