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Proceedings Paper

Numerical modeling of microwave switchers with subpicosecond time delay
Author(s): B. Konoplev; E. Ryndin
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Paper Abstract

In this article the layout and structure of the microwave switcher based on the managed electron density maximum rearrangement in multi-contacts functionally integrated active region are considered. The basis of the microwave switcher is a normally opened high electron mobility transistor structure (HEMT) with multiple Schottky gates and the corresponding number of switching ohmic contacts. In this research two-dimensional finite-difference physical and topological model of the considered microwave switchers is proposed. The distinctive features of the proposed model are combination of two different sets of variables and explicit first-order upwind discretization scheme for the normalized continuity equation. The obtained results of numerical modeling are discussed.

Paper Details

Date Published: 30 December 2016
PDF: 8 pages
Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 1022410 (30 December 2016); doi: 10.1117/12.2266551
Show Author Affiliations
B. Konoplev, Southern Federal Univ. (Russian Federation)
E. Ryndin, Southern Federal Univ. (Russian Federation)

Published in SPIE Proceedings Vol. 10224:
International Conference on Micro- and Nano-Electronics 2016
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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