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Proceedings Paper • Open Access

Axial InGaAs/GaAs nanowire separate absorption-multiplication avalanche photodetectors (Conference Presentation)
Author(s): Diana L. Huffaker; Alan C. Farrell; Xiao Meng

Paper Abstract

In0.53Ga0.47As/InP single photon avalanche detectors (SPADs) have a high photon detection efficiency in the near-IR, however the dark count rate is prohibitively high at room temperature. A nanowire-based In0.3Ga0.7As/GaAs SPAD can significantly reduce the DCR through a nearly three order of magnitude reduction in bulk InGaAs volume, as well as by reducing the indium composition for operation at 1064 nm. As a first step, we have successfully grown axial InGaAs/GaAs heterostructures using catalyst-free selective-area epitaxy. We will present the electrical characterization of a vertically oriented nanowire array InGaAs/GaAs SPADs operating at 1064 nm and use 3-dimensional modeling to aid in the analysis.

Paper Details

Date Published: 7 June 2017
PDF: 1 pages
Proc. SPIE 10193, Ultrafast Bandgap Photonics II, 101930D (7 June 2017); doi: 10.1117/12.2265851
Show Author Affiliations
Diana L. Huffaker, Univ. of California, Los Angeles (United States)
Cardiff Univ. (United Kingdom)
Alan C. Farrell, Univ. of California, Los Angeles (United States)
Xiao Meng, Cardiff Univ. (United Kingdom)


Published in SPIE Proceedings Vol. 10193:
Ultrafast Bandgap Photonics II
Michael K. Rafailov, Editor(s)

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