In0.53Ga0.47As/InP single photon avalanche detectors (SPADs) have a high photon detection efficiency in the near-IR, however the dark count rate is prohibitively high at room temperature. A nanowire-based In0.3Ga0.7As/GaAs SPAD can significantly reduce the DCR through a nearly three order of magnitude reduction in bulk InGaAs volume, as well as by reducing the indium composition for operation at 1064 nm. As a first step, we have successfully grown axial InGaAs/GaAs heterostructures using catalyst-free selective-area epitaxy. We will present the electrical characterization of a vertically oriented nanowire array InGaAs/GaAs SPADs operating at 1064 nm and use 3-dimensional modeling to aid in the analysis.

Date Published: 7 June 2017
PDF: 1 pages
Proc. SPIE 10193, Ultrafast Bandgap Photonics II, 101930D (7 June 2017); doi: 10.1117/12.2265851

Published in SPIE Proceedings Vol. 10193:
Ultrafast Bandgap Photonics II
Michael K. Rafailov, Editor(s)