The principle of the formation of thin and thick photoresist films on surfaces with considerable relief by the aerosol deposition using ultra low flow was investigated. It was shown that the change in the photoresist blend composition of solution is required with decreasing film thickness less than 1 micron to achieve a roughness of less than 150 nm. And the film at least 0.7 microns thickness can be formed and have the uniform film thickness as on the walls and on horizontal surfaces on the substrate with grooves obtained by etching liquid. It is shown that even with a film thickness of 10 microns vertical walls may be partially cover the of the photoresist and unfilled plasma-chemical etching grooves with vertical walls, whose width not exceeding 10 microns. To determine the uniformity of film thickness atomic force microscopy was used. And it was shown that up to 2 microns of film thickness spectroscopic methods with the analysis of the fluorescent signal intensity for positive photoresists is possible to use too.

Date Published: 30 December 2016
PDF: 7 pages
Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102241N (30 December 2016);

Published in SPIE Proceedings Vol. 10224:
International Conference on Micro- and Nano-Electronics 2016
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)