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Proceedings Paper

Photoelectrochemistry of III-V epitaxial layers and nanowires for solar energy conversion
Author(s): Vijay Parameshwaran; Ryan Enck; Roy Chung; Stephen Kelley; Anand Sampath; Meredith Reed; Xiaoqing Xu; Bruce Clemens
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Paper Abstract

III-V materials, which exhibit high absorption coefficients and charge carrier mobility, are ideal templates for solar energy conversion applications. This work describes the photoelectrochemistry research in several IIIV/electrolyte junctions as an enabler for device design for solar chemical reactions. By designing lattice-matched epitaxial growth of InGaP and GaP on GaAs and Si, respectively, extended depletion region electrodes achieve photovoltages which provide an additional boost to the underlying substrate photovoltage. The InGaP/GaAs and GaP/Si electrodes drive hydrogen evolution currents under aqueous conditions. By using nanowires of InN and InP under carefully controlled growth conditions, current and capacitance measurements are obtained to reveal the nature of the nanowire-electrolyte interface and how light is translated into photocurrent for InP and a photovoltage in InN. The materials system is expanded into the III-V nitride semiconductors, in which it is shown that varying the morphology of GaN on silicon yields insights to how the interface and light conversion is modulated as a basis for future designs. Current extensions of this work address growth and tuning of the III-V nitride electrodes with doping and polarization engineering for efficient coupling to solar-driven chemical reactions, and rapid-throughput methods for III-V nanomaterials synthesis in this materials space.

Paper Details

Date Published: 18 May 2017
PDF: 14 pages
Proc. SPIE 10194, Micro- and Nanotechnology Sensors, Systems, and Applications IX, 101940N (18 May 2017); doi: 10.1117/12.2264950
Show Author Affiliations
Vijay Parameshwaran, U.S. Army Research Lab. (United States)
Ryan Enck, U.S. Army Research Lab. (United States)
Roy Chung, U.S. Army Research Lab. (United States)
Stephen Kelley, U.S. Army Research Lab. (United States)
Anand Sampath, U.S. Army Research Lab. (United States)
Meredith Reed, U.S. Army Research Lab. (United States)
Xiaoqing Xu, Stanford Univ. (United States)
Bruce Clemens, Stanford Univ. (United States)

Published in SPIE Proceedings Vol. 10194:
Micro- and Nanotechnology Sensors, Systems, and Applications IX
Thomas George; Achyut K. Dutta; M. Saif Islam, Editor(s)

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