Share Email Print
cover

Proceedings Paper

Optical properties of GaAs-based LED with Fresnel structure in the surface
Author(s): Ivana Lettrichova; Dusan Pudis; Agata Laurencikova; Peter Gaso; Lubos Suslik; Daniel Jandura; Jana Durisova; Jozef Novak
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

This contribution presents implementation of one dimensional Fresnel structure in surface emitting part of the AlGaAs/GaAs multi-quantum well light emitting diode (LED).The structure consists in drilled lines distributed with square root of distance in order to obtain structures with different foci. First structure was prepared by electron beam lithography and etched directly in the emitting surface using reactive-ion etching. Second structure was prepared in the surface of thin PDMS membrane that can be stack directly on the emitting surface. The membrane is fabricated using dip in laser lithography combined with PDMS embossing. Implementation of such Fresnel structures leads in modification of LED far-field what was proved by goniophotometer measurements.

Paper Details

Date Published: 23 December 2016
PDF: 5 pages
Proc. SPIE 10142, 20th Slovak-Czech-Polish Optical Conference on Wave and Quantum Aspects of Contemporary Optics, 101421P (23 December 2016); doi: 10.1117/12.2264454
Show Author Affiliations
Ivana Lettrichova, Univ. of Zilina (Slovakia)
Dusan Pudis, Univ. of Zilina (Slovakia)
Agata Laurencikova, Institute of Electrical Engineering (Slovakia)
Peter Gaso, Univ. of Zilina (Slovakia)
Lubos Suslik, Univ. of Zilina (Slovakia)
Daniel Jandura, Univ. of Zilina (Slovakia)
Jana Durisova, Univ. of Zilina (Slovakia)
Jozef Novak, Institute of Electrical Engineering (Slovakia)


Published in SPIE Proceedings Vol. 10142:
20th Slovak-Czech-Polish Optical Conference on Wave and Quantum Aspects of Contemporary Optics
Jarmila Müllerová; Dagmar Senderáková; Libor Ladányi; Ľubomír Scholtz, Editor(s)

© SPIE. Terms of Use
Back to Top