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Proceedings Paper

Voltage control of surface plasmon and phonon interactions in doped semiconductor-dielectric interfaces
Author(s): Mohsen Janipour; Ibrahim Burc Misirlioglu; Kursat Sendur
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Paper Abstract

Carrier distribution of semiconductors (SCs) differs from metals where they can give inhomogeneous carrier distributions like the classical Schottky junction. In this study, we show that the carrier distribution at a moderately doped semiconductor – dielectric (DE) interface can be tuned by applying external voltage, and then an inhomogeneous permittivity. Using the Maxwell’s equations for doped semiconductor surfaces, we illustrate the voltage controlled tunability of plasmon and phonon polaritons.

Paper Details

Date Published: 22 February 2017
PDF: 12 pages
Proc. SPIE 10098, Physics and Simulation of Optoelectronic Devices XXV, 1009808 (22 February 2017); doi: 10.1117/12.2263965
Show Author Affiliations
Mohsen Janipour, Sabanci Univ. (Turkey)
Iran Univ. of Science and Technology (Iran, Islamic Republic of)
Ibrahim Burc Misirlioglu, Sabanci Univ. (Turkey)
Kursat Sendur, Sabanci Univ. (Turkey)


Published in SPIE Proceedings Vol. 10098:
Physics and Simulation of Optoelectronic Devices XXV
Bernd Witzigmann; Marek Osiński; Yasuhiko Arakawa, Editor(s)

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