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Proceedings Paper

a-SiCxNy:H thin films for applications in solar cells as passivation and antireflective coatings
Author(s): Barbara Swatowska; Stanisława Kluska; Gabriela Lewińska; Julia Golańska; Tomasz Stapiński
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Paper Abstract

Amorphous a-SiCxNy:H thin films may be an alternative to a-Si:N:H coatings which are commonly used in silicon solar cells. This material was obtained by PECVD (13.56 MHz) method. The reaction gases used: silane, methane, nitrogen and ammonia. The structure of the layers were investigated by scanning electron microscopy (SEM) and infrared spectroscopy (FTIR). IR absorption spectra of a-SiCxNy:H layers confirmed the presence of various hydrogen bonds – it is important for passivation of Si structural defects. The ellipsometric measurements were implemented to determine the thickness of layers d, refractive index n, extinction coefficient k and energy gap Eg. The values of the energy gap of a-SiCxNy:H layers are in the range from 1.89 to 4.34 eV. The correlation between energy gap of materials and refractive index was found. Generally the introduction of N and/or C into the amorphous silicon network rapidly increases the Eg values.

Paper Details

Date Published: 22 December 2016
PDF: 7 pages
Proc. SPIE 10175, Electron Technology Conference 2016, 101751C (22 December 2016); doi: 10.1117/12.2263801
Show Author Affiliations
Barbara Swatowska, AGH Univ. of Science and Technology (Poland)
Stanisława Kluska, AGH Univ. of Science and Technology (Poland)
Gabriela Lewińska, Cracow Univ. of Technology (Poland)
Julia Golańska, AGH Univ. of Science and Technology (Poland)
Tomasz Stapiński, AGH Univ. of Science and Technology (Poland)

Published in SPIE Proceedings Vol. 10175:
Electron Technology Conference 2016
Barbara Swatowska; Wojciech Maziarz; Tadeusz Pisarkiewicz; Wojciech Kucewicz, Editor(s)

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