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Proceedings Paper

Black phosphorous optoelectronic devices
Author(s): Xiaolong Chen; Fengnian Xia
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Paper Abstract

Black phosphorus recently emerged as a promising two-dimensional material due to its widely tunable and direct bandgap, high carrier mobility and remarkable in-plane anisotropic electrical, optical and phonon properties. It serendipitously bridges the zero-gap graphene and the relatively large-bandgap transition metal dichalcogenides such as molybdenum disulfide (MoS2). In this brief review manuscript, we will first cover the basic properties of few-layer and thin-film black phosphorus. Then we will present a few potential applications of black phosphorus such as radiofrequency transistors and wideband photodetectors. Finally we will discuss the recent observation of efficient bandgap tuning in black phosphorus thin films in a dual-gate transistor, and conclude with the discussion of synthesis of large area and high quality black phosphorus thin films.

Paper Details

Date Published: 18 May 2017
PDF: 8 pages
Proc. SPIE 10194, Micro- and Nanotechnology Sensors, Systems, and Applications IX, 101940E (18 May 2017); doi: 10.1117/12.2263244
Show Author Affiliations
Xiaolong Chen, Yale Univ. (United States)
Fengnian Xia, Yale Univ. (United States)


Published in SPIE Proceedings Vol. 10194:
Micro- and Nanotechnology Sensors, Systems, and Applications IX
Thomas George; Achyut K. Dutta; M. Saif Islam, Editor(s)

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