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Proceedings Paper

Analysis of multilayer black phosphorus for photodetector applications
Author(s): Gustavo A. Saenz; Dalal Fadil; Anupama B. Kaul
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Paper Abstract

Two-dimensional black phosphorous (BP) is a novel material with great potential for implementation in a new generation of flexible and optoelectronics devices. 2D BP, an intrinsically p-type semiconductor with high hole mobility, has a hexagonal honeycomb structure with strong anisotropic properties, including mechanical, thermal, electrical, and optical properties, along the zigzag against the armchair direction. In contrast with other semiconductor layered materials, such as Transition Metal Dichalcogenides (TMDs), the band gap in black phosphorous remains direct both in bulk as in monolayer. Also, as the number of layers is reduced the band gap is open up from ~ 0.3 eV in bulk to ~ 2 eV or more in monolayer, opposite effect in TMDs. BP exhibits a fast photoresponse, it can be operated in near infrared spectrum, and the photodetection can be tunable with an external electric field. In this work, we have mechanically exfoliated multilayer black phosphorus. We have conducted a stability and degradation study of the exfoliated membranes when exposed they are exposed to air and high temperatures up to 400 °C. In addition, a two-terminal broadband photodetector has been designed and fabricated based on multilayer black phosphorus. The optoelectrical measurements exhibit relatively high electrical transport levels (~ 100 uA at 1 V) compared to previous reports. The photoresponse of our device is analyzed here where the photocurrent was measured as a function of the source-drain bias voltages.

Paper Details

Date Published: 28 April 2017
PDF: 9 pages
Proc. SPIE 10209, Image Sensing Technologies: Materials, Devices, Systems, and Applications IV, 1020912 (28 April 2017); doi: 10.1117/12.2262854
Show Author Affiliations
Gustavo A. Saenz, The Univ. of Texas at El Paso (United States)
Dalal Fadil, Institut d'Electronique de Microélectronique et de Nanotechnologie (France)
Anupama B. Kaul, The Univ. of Texas at El Paso (United States)

Published in SPIE Proceedings Vol. 10209:
Image Sensing Technologies: Materials, Devices, Systems, and Applications IV
Nibir K. Dhar; Achyut K. Dutta, Editor(s)

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