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Proceedings Paper

Radiation effects testing via semiconductor nonlinear optics: successes and challenges
Author(s): Dale McMorrow; Joel M. Hales; Ani Khachatrian; Stephen P. Buchner; Jeffrey H. Warner
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Paper Abstract

Single-event effects (SEEs) refer to phenomena that arise from the interaction of single energetic particles with microelectronic devices, as is experienced in harsh radiation environments. Carrier generation induced by two-photon absorption (TPA) has become a valuable tool for SEE investigations of microelectronic structures owing to its unique ability to inject carriers through the wafer, directly into well-defined locations in complex circuits. Recent effort has focused on putting the TPA SEE technique on a more quantitative basis. This paper addresses the recent successes in achieving this goal, as well as the challenges that are faced moving forward.

Paper Details

Date Published: 8 May 2017
PDF: 8 pages
Proc. SPIE 10193, Ultrafast Bandgap Photonics II, 1019307 (8 May 2017); doi: 10.1117/12.2262841
Show Author Affiliations
Dale McMorrow, U.S. Naval Research Lab. (United States)
Joel M. Hales, U.S. Naval Research Lab. (United States)
Sotera Defense Solutions, Inc. (United States)
Ani Khachatrian, U.S. Naval Research Lab. (United States)
Sotera Defense Solutions, Inc. (United States)
Stephen P. Buchner, U.S. Naval Research Lab. (United States)
Jeffrey H. Warner, U.S. Naval Research Lab. (United States)

Published in SPIE Proceedings Vol. 10193:
Ultrafast Bandgap Photonics II
Michael K. Rafailov, Editor(s)

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