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Proceedings Paper

Ultrafast photoconductive devices based upon GaAs:ErAs nanoparticle composite driven at 1550 nm
Author(s): W-D. Zhang; A. Mingardi; E. R. Brown; A. Feldman; T. Harvey; R. P. Mirin
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Paper Abstract

This paper reports progress on a type of ultrafast photoconductive source that can be driven at 1550 nm but exhibits the robustness of GaAs (e.g., low-temperature-grown GaAs) driven at 780 nm. The approach is GaAs doped heavily with Er (≈4x1020 cm-3 or 2% atomic-Er-to-Ga fraction) such that ErAs nanoparticles form spontaneously during epitaxial growth by MBE. The nanoparticles are mostly spherical with a diameter of a few nm while the packing density is estimated as high as ~2.2x1019/cm3. Yet, the Er-doped GaAs epilayer maintains excellent structural quality and smooth surface morphology. A photoconductive switch coupled to a 4-turn square spiral antenna is fabricated and characterized. At least ~40 μW average THz power is generated when the device is biased at 75 V and pumped with a 1550-nm 90-fs-short pulsed laser having average power ~85 mW. This research is significant for 1550-nm-technologycompatible, cost-effective THz sources.

Paper Details

Date Published: 8 May 2017
PDF: 6 pages
Proc. SPIE 10193, Ultrafast Bandgap Photonics II, 1019308 (8 May 2017); doi: 10.1117/12.2262647
Show Author Affiliations
W-D. Zhang, Wright State Univ. (United States)
A. Mingardi, Wright State Univ. (United States)
E. R. Brown, Wright State Univ. (United States)
A. Feldman, National Institute of Standards and Technology (United States)
T. Harvey, National Institute of Standards and Technology (United States)
R. P. Mirin, National Institute of Standards and Technology (United States)

Published in SPIE Proceedings Vol. 10193:
Ultrafast Bandgap Photonics II
Michael K. Rafailov, Editor(s)

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