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Proceedings Paper

Design and fabrication of metal-insulator-metal diode for high frequency applications
Author(s): Ibrahim Azad; Manoj K. Ram; D. Yogi Goswami; Elias Stefanakos
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Paper Abstract

Metal-insulator-metal (MIM) diodes play significant role in high speed electronics where high frequency rectification is needed. Quantum based tunneling mechanism helps MIM diodes to rectify at high frequency signals. Rectenna, antenna coupled MIM diodes are becoming popular due to their potential use as IR detectors and energy harvesters. Because of small active area, MIM diodes could easily be incorporated into integrated circuits (IC's). The objective of the work is to design and develop MIM diodes for high frequency rectification. In this work, thin insulating layer of ZnO was fabricated using Langmuir-Blodgett (LB) technique which facilitates ultrathin thin, uniform and pinhole free fabrication of insulating layer. The ZnO layer was synthesized from organic precursor of zinc acetate layer. The optimization in the LB technique of fabrication process led to fabricate MIM diodes with high non-linearity and sensitivity. Moreover, the top and bottom electrodes as well as active area of the diodes were patterned using UV-tunneling conduction mechanism. The highest sensitivity of the diode was measured around 37 (A/W), and the rectification ratio was found around 36 under low applied bias at ±100 mV.

Paper Details

Date Published: 16 May 2017
PDF: 5 pages
Proc. SPIE 10177, Infrared Technology and Applications XLIII, 101772J (16 May 2017); doi: 10.1117/12.2262618
Show Author Affiliations
Ibrahim Azad, Univ. of South Florida (United States)
Manoj K. Ram, Univ. of South Florida (United States)
D. Yogi Goswami, Univ. of South Florida (United States)
Elias Stefanakos, Univ. of South Florida (United States)

Published in SPIE Proceedings Vol. 10177:
Infrared Technology and Applications XLIII
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; John Lester Miller; Paul R. Norton, Editor(s)

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