Share Email Print

Proceedings Paper

Growth and characterization of InGaAs/InAsSb strained layer superlattice infrared detectors
Author(s): G. Ariyawansa; J. M. Duran; C. J. Reyner; E. H. Steenbergen; N. Yoon; D. Wasserman; J. E. Scheihing
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Type-II strained layer superlattices (SLS) are an active research topic in the infrared detector community and applications for SLS detectors continue to grow. SLS detector technology has already reached the commercial market due to improvements in material quality, device design, and device fabrication. Despite this progress, the optimal superlattice design has not been established, and at various times has been believed to be InAs/GaSb, InAs/InGaSb, or InAs/InAsSb. Building on these, we investigate the properties of a new mid-wave infrared SLS material: InGaAs/InAsSb SLS. The ternary InGaAs/InAsSb SLS has three main advantages over other SLS designs: greater support for strain compensation, enhanced absorption due to increased electron-hole wavefunction overlap, and improved vertical hole mobility due to reduced hole effective mass. Here, we compare three ternary SLSs, with approximately the same bandgap (0.240 eV at 150 K), comprised of Ga fractions of 5%, 10%, and 20% to a reference sample with 0% Ga. Enhanced absorption is both theoretically predicted and experimentally realized. Furthermore, the characteristics of ternary SLS infrared detectors based on an nBn architecture are reported and exhibit nearly state-of-the-art dark current performance with minimal growth optimization. We report standard material and device characterization information, including dark current and external quantum efficiency, and provide further analysis that indicates improved quantum efficiency and vertical hole mobility. Finally, a 320×256 focal plane array built based on the In0.8Ga0.2As/InAs0.65Sb0.35 SLS design is demonstrated with promising performance.

Paper Details

Date Published: 16 May 2017
PDF: 11 pages
Proc. SPIE 10177, Infrared Technology and Applications XLIII, 1017712 (16 May 2017); doi: 10.1117/12.2262579
Show Author Affiliations
G. Ariyawansa, Air Force Research Lab. (United States)
J. M. Duran, Air Force Research Lab. (United States)
C. J. Reyner, Air Force Research Lab. (United States)
E. H. Steenbergen, Air Force Research Lab. (United States)
N. Yoon, The Univ. of Texas at Austin (United States)
D. Wasserman, The Univ. of Texas at Austin (United States)
J. E. Scheihing, Air Force Research Lab. (United States)

Published in SPIE Proceedings Vol. 10177:
Infrared Technology and Applications XLIII
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; John Lester Miller; Paul R. Norton, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?