A prototype of a readout IC (ROIC) designed for use in high temperature coefficient of resistance (TCR) SiGe microbolometers is presented. The prototype ROIC architecture implemented is based on a bridge with active and blind bolometer pixels with a capacitive transimpedance amplifier (CTIA) input stage and column parallel integration with serial readout. The ROIC is designed for use in high (≥ 4 %/K) TCR and high detector resistance Si/SiGe microbolometers with 17x17 μm² pixel sizes in development. The prototype has been designed and fabricated in 0.25- μm SiGe:C BiCMOS process.

Date Published: 3 May 2017
PDF: 6 pages
Proc. SPIE 10177, Infrared Technology and Applications XLIII, 101771U (3 May 2017); doi: 10.1117/12.2262459

Published in SPIE Proceedings Vol. 10177:
Infrared Technology and Applications XLIII
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; John Lester Miller; Paul R. Norton, Editor(s)