The method of the recording and storage of the information in boron-doped silicon using YAG:Nd laser is proposed. The laser-induced centers, which are generated during the laser annealing of silicon can be used for the recording of information. The dependence of a concentration and a time-stability of generated centers on parameters of the laser radiation and impurities content in the silicon are investigated experimentally. The model of the generation of additional centers in the laser-annealed area is proposed.

Date Published: 3 November 1995
PDF: 5 pages
Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); doi: 10.1117/12.226226

Published in SPIE Proceedings Vol. 2648:
International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)