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Proceedings Paper

Recording and storage of information in boron-doped silicon using YAG:Nd laser
Author(s): Juris Blums; Arthur Medvids
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Paper Abstract

The method of the recording and storage of the information in boron-doped silicon using YAG:Nd laser is proposed. The laser-induced centers, which are generated during the laser annealing of silicon can be used for the recording of information. The dependence of a concentration and a time-stability of generated centers on parameters of the laser radiation and impurities content in the silicon are investigated experimentally. The model of the generation of additional centers in the laser-annealed area is proposed.

Paper Details

Date Published: 3 November 1995
PDF: 5 pages
Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); doi: 10.1117/12.226226
Show Author Affiliations
Juris Blums, Riga Technical Univ. (Latvia)
Arthur Medvids, Riga Technical Univ. (Latvia)


Published in SPIE Proceedings Vol. 2648:
International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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