The experimental method for express diagnostics of luminescence intensity distribution (and, hence, of distribution of radiative recombination centers) over the semiconductor wafer surface is described. The method is based on transferring the TV image of the luminescent surface of a semiconductor wafer to the oscilloscope screen in axonometric projection. It makes it possible to measure both the relative efficiency of luminescence in different points of the wafer surface and also the absolute values of this efficiency. An example of the use of the method developed for a wide-band-gap II-YI semiconductor (cadmium sulphide) is presented.

Date Published: 3 November 1995
PDF: 4 pages
Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); doi: 10.1117/12.226194

Published in SPIE Proceedings Vol. 2648:
International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)