
Proceedings Paper
High-NA metrology and sensing on Berkeley MET5Format | Member Price | Non-Member Price |
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Paper Abstract
In this paper we compare two non-interferometric wavefront sensors suitable for in-situ high-NA EUV optical testing. The first is the AIS sensor, which has been deployed in both inspection and exposure tools. AIS is a compact, optical test that directly measures a wavefront by probing various parts of the imaging optic pupil and measuring localized wavefront curvature. The second is an image-based technique that uses an iterative algorithm based on simulated annealing to reconstruct a wavefront based on matching aerial images through focus. In this technique, customized illumination is used to probe the pupil at specific points to optimize differences in aberration signatures.
Paper Details
Date Published: 27 March 2017
PDF: 6 pages
Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101430N (27 March 2017); doi: 10.1117/12.2261893
Published in SPIE Proceedings Vol. 10143:
Extreme Ultraviolet (EUV) Lithography VIII
Eric M. Panning, Editor(s)
PDF: 6 pages
Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101430N (27 March 2017); doi: 10.1117/12.2261893
Show Author Affiliations
Ryan Miyakawa, Lawrence Berkeley National Lab. (United States)
Chris Anderson, Lawrence Berkeley National Lab. (United States)
Chris Anderson, Lawrence Berkeley National Lab. (United States)
Patrick Naulleau, Lawrence Berkeley National Lab. (United States)
Published in SPIE Proceedings Vol. 10143:
Extreme Ultraviolet (EUV) Lithography VIII
Eric M. Panning, Editor(s)
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