Sidewall image transfer has become a key enabler of future design shrink. It is consisted of several process steps that multiply the number of lithography backbone patterns in a self-aligned form, shrinking pattern and pitch sizes.

The quality of the image transfer process depends on the characteristics of the sidewall pattern morphology. Rectangular Sidewalls with a flat top and vertical edges will result with symmetrical and uniform etched image. On the other hand, Facet top, bent sidewalls, sloped edges or foot, may distort the etched image and device electrical characteristics.

In this paper we present a description of the 3DSEM metrology technique used and simulation results. We demonstrate three dimensional characterization of Sidewalls pattern fabricated with different etch recipes:

Top Facet measurements vs cross section images

Spacer edge slop and oxide recess characterization

Date Published: 27 April 2017
PDF: 1 pages
Proc. SPIE 10149, Advanced Etch Technology for Nanopatterning VI, 101490C (27 April 2017); doi: 10.1117/12.2261801

Published in SPIE Proceedings Vol. 10149:
Advanced Etch Technology for Nanopatterning VI
Sebastian U. Engelmann, Editor(s)