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Proceedings Paper

Reactive Ion Etching (RIE) of silicon for the technology of nanoelectronic devices and structures
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Paper Abstract

In this work we present the investigations aimed at the optimization of the technology of Reactive Ion Etching in sulfur hexafluoride (SF6) plasma of silicon, which is necessary during fabrication of TFET according to the original concept of the device designed at Institute of Microelectronics and Optoelectronics (IMiO) of Warsaw University of Technology (WUT) laboratory. We have performed a two-stage optimization of RIE process’ parameters in order to obtain a controllable process characterized by good selectivity and anisotropy. Presented in this study findings have shown that the SF6 flow most significantly influence onto the RIE process’ results. Selected and optimized processing step will be used in the course of the fabrication of TFET devices, in future.

Paper Details

Date Published: 22 December 2016
PDF: 7 pages
Proc. SPIE 10175, Electron Technology Conference 2016, 101750F (22 December 2016); doi: 10.1117/12.2261676
Show Author Affiliations
Piotr Wiśniewski, Warsaw Univ. of Technology (Poland)
Robert Mroczyński, Wroclaw Univ. of Technology (Poland)
Bogdan Majkusiak, Warsaw Univ. of Technology (Poland)

Published in SPIE Proceedings Vol. 10175:
Electron Technology Conference 2016
Barbara Swatowska; Wojciech Maziarz; Tadeusz Pisarkiewicz; Wojciech Kucewicz, Editor(s)

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