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Proceedings Paper

Manufacturing of HfOxNy films using reactive magnetron sputtering for ISFET application
Author(s): Piotr Firek; Piotr Wysokiński
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Paper Abstract

Hafnium Oxide-Nitride films were deposited using reactive magnetron sputtering in O2/N2/Ar gas mixture. Deposition was planned according to Taguchi optimization method. Morphology of fabricated layers was tested using AFM technique (Ra=0.2÷1,0 nm). Thickness of HfOXNY films was measured using spectroscopic ellipsometry (t=45÷54 nm). Afterwards MIS structures were created by Al metallization process then layers were electrically characterised using I-V and C-V measurements. This allowed to calculate the electrical parameters of layers such as: flat-band voltage UFB, dielectric constant Ki, interface state trap density Dit and effective charge Qeff. Subsequently, deposited HfOxNy layers were annealed in PDA process (40 min 400 °C 100% N2) after which the electrical characterization was performed again.

Paper Details

Date Published: 22 December 2016
PDF: 6 pages
Proc. SPIE 10175, Electron Technology Conference 2016, 1017507 (22 December 2016); doi: 10.1117/12.2261660
Show Author Affiliations
Piotr Firek, Warsaw Univ. of Technology (Poland)
Piotr Wysokiński, Warsaw Univ. of Technology (Poland)

Published in SPIE Proceedings Vol. 10175:
Electron Technology Conference 2016
Barbara Swatowska; Wojciech Maziarz; Tadeusz Pisarkiewicz; Wojciech Kucewicz, Editor(s)

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