Using IR spectroscopy, Rutherford back-scattering technique and optical microscopy the structure of SIPOS films produced by CVD method is investigated. The network of oxygen- doped silicon is shown to represent a mixture of Si-O_y-Si_4-y complexes with 0 less than or equal to y less than or equal to 4 and micro-inclusions of strongly oxidized silicon. Contribution of these complexes is dependent on the processes of layer growth and post- treatments. IR spectroscopy was demonstrated to be a convenient technique for determination of oxygen concentration and structural arrangement in silicon-oxygen phase.

Date Published: 3 November 1995
PDF: 6 pages
Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); doi: 10.1117/12.226160

Published in SPIE Proceedings Vol. 2648:
International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)