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Proceedings Paper

Optical characterization of the structure of SIPOS layers
Author(s): I. P. Lisovskii; Vladimir G. Litovchenko; V. B. Lozinskii; E. V. Mischenko; Walter Fussel
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Paper Abstract

Using IR spectroscopy, Rutherford back-scattering technique and optical microscopy the structure of SIPOS films produced by CVD method is investigated. The network of oxygen- doped silicon is shown to represent a mixture of Si-Oy-Si4-y complexes with 0 less than or equal to y less than or equal to 4 and micro-inclusions of strongly oxidized silicon. Contribution of these complexes is dependent on the processes of layer growth and post- treatments. IR spectroscopy was demonstrated to be a convenient technique for determination of oxygen concentration and structural arrangement in silicon-oxygen phase.

Paper Details

Date Published: 3 November 1995
PDF: 6 pages
Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); doi: 10.1117/12.226160
Show Author Affiliations
I. P. Lisovskii, Institute of Semiconductor Physics (Ukraine)
Vladimir G. Litovchenko, Institute of Semiconductor Physics (Ukraine)
V. B. Lozinskii, Institute of Semiconductor Physics (Ukraine)
E. V. Mischenko, Institute of Semiconductor Physics (Ukraine)
Walter Fussel, Hahn-Meitner Institute (Germany)


Published in SPIE Proceedings Vol. 2648:
International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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