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Proceedings Paper

Single-expose patterning development for EUV lithography
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Paper Abstract

Initial readiness of EUV (extreme ultraviolet) patterning was demonstrated in 2016 with IBM Alliance's 7nm device technology. The focus has now shifted to driving the 'effective' k1 factor and enabling the second generation of EUV patterning. With the substantial cost of EUV exposure there is significant interest in extending the capability to do single exposure patterning with EUV. To enable this, emphasis must be placed on the aspect ratios, adhesion, defectivity reduction, etch selectivity, and imaging control of the whole patterning process. Innovations in resist materials and processes must be included to realize the full entitlement of EUV lithography at 0.33NA. In addition, enhancements in the patterning process to enable good defectivity, lithographic process window, and post etch pattern fidelity are also required. Through this work, the fundamental material challenges in driving down the effective k1 factor will be highlighted.

Paper Details

Date Published: 24 March 2017
PDF: 9 pages
Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101431G (24 March 2017); doi: 10.1117/12.2261216
Show Author Affiliations
Anuja De Silva, IBM Semiconductor Technology Research (United States)
Karen Petrillo, IBM Semiconductor Technology Research (United States)
Luciana Meli, IBM Semiconductor Technology Research (United States)
Jeffrey C. Shearer, IBM Semiconductor Technology Research (United States)
Genevieve Beique, GLOBALFOUNDRIES Inc. (United States)
Lei Sun, GLOBALFOUNDRIES Inc. (United States)
Indira Seshadri, IBM Semiconductor Technology Research (United States)
Taehwan Oh, SAMSUNG (United States)
Seulgi Han, SAMSUNG (United States)
Nicole Saulnier, IBM Semiconductor Technology Research (United States)
Joe Lee, IBM Semiconductor Technology Research (United States)
John C. Arnold, IBM Semiconductor Technology Research (United States)
Bassem Hamieh, IBM Semiconductor Technology Research (United States)
Nelson M. Felix, IBM Semiconductor Technology Research (United States)
Tsuyoshi Furukawa, JSR Micro, Inc. (United States)
Lovejeet Singh, JSR Micro, Inc. (United States)
Ramakrishnan Ayothi, JSR Micro, Inc. (United States)


Published in SPIE Proceedings Vol. 10143:
Extreme Ultraviolet (EUV) Lithography VIII
Eric M. Panning, Editor(s)

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