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Proceedings Paper

Synthesis and characterization of rare earth doped ternary chalcogenide semiconductors: effective electro-luminescence and laser materials
Author(s): Arif M. Pashayev; Bahadir G. Tagiev; Oktay B. Tagiev; Ilkin T. Huseynov; Kerim R. Allahverdiyev
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Paper Abstract

Thiogallate compounds represented by general formula MGa2S4 [where M- Ca+2, Ba+2, Sr+2, Pb+2, Eu+2, Eu+3, (Na+1La+3) and (Na+1Ce+3)] are highly effective electro-luminescence and laser materials. These materials were first synthesized in 1971 and studied by many groups due to their possible applicability in opto-, and quantum- electronics. Forbidden band gap (ΔE) at room temperature (RT) for these materials varies in a wide range from ΔE ∼ eV for CaGa2S4 to ∼ 2.32 eV for Ca4Ga2S7.

In the present paper the results of structural properties and photoluminescence (PL) measurements (temperature range of 77 – 300 K) of melt grown Ca4Ga2S7 single crystals doped with 5 at% of rare earth (RE) Eu2+ (Ca4Ga2S7 : Eu2+) are described for the first time. It is shown that, broadband PL with a maximum at 660 nm is caused with intra shell transitions 4f65d - 4f7(8S7/2) of Eu2+ ions.

Paper Details

Date Published: 5 January 2017
PDF: 5 pages
Proc. SPIE 10226, 19th International Conference and School on Quantum Electronics: Laser Physics and Applications, 102260J (5 January 2017); doi: 10.1117/12.2260889
Show Author Affiliations
Arif M. Pashayev, National Aviation Academy (Azerbaijan)
Bahadir G. Tagiev, National Aviation Academy (Azerbaijan)
Institute of Physics (Azerbaijan)
Oktay B. Tagiev, Institute of Physics (Azerbaijan)
M.V. Lomonosov Moscow State Univ. (Azerbaijan)
Ilkin T. Huseynov, National Aviation Academy (Azerbaijan)
Kerim R. Allahverdiyev, Azerbaijan National Aviation Academy (Azerbaijan)

Published in SPIE Proceedings Vol. 10226:
19th International Conference and School on Quantum Electronics: Laser Physics and Applications
Tanja Dreischuh; Sanka Gateva; Albena Daskalova; Alexandros Serafetinides, Editor(s)

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