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Proceedings Paper

Overlay performance assessment of MAPPER's FLX-1200 (Conference Presentation)
Author(s): Ludovic Lattard; Isabelle Servin; Jonathan Pradelles; Yoann Blancquaert; Guido Rademaker; Laurent Pain; Guido de Boer; Pieter Brandt; Michel Dansberg; Remco J. A. Jager; Jerry J. M. Peijster; Erwin Slot; Stijn W. H. K. Steenbrink; Niels Vergeer; Marco Wieland

Paper Abstract

Mapper Lithography has introduced its first product, the FLX–1200, which is installed at CEA-Leti in Grenoble (France). This is a mask less lithography system, based on massively parallel electron-beam writing with high-speed optical data transport for switching the electron beams. This FLX platform is initially targeted for 1 wph performance for 28 nm technology nodes, but can also be used for less demanding imaging. The electron source currently integrated is capable of scaling to 10 wph at the same resolution performance, which will be implemented by gradually upgrading the illumination optics. The system has an optical alignment system enabling mix-and-match with optical 193 nm immersion systems using standard NVSM marks. The tool at CEA-Leti is in-line with a Sokudo Duo clean track. Mapper Lithography and CEA-Leti are working in collaboration to develop turnkey solution for specific applications. At previous conferences we have presented imaging results including 28nm node resolution, cross wafer CDu of 2.5nm 3 and a throughput of half a wafer per hour, overhead times included. At this conference we will present results regarding the overlay performance of the FLX-1200. In figure 2 an initial result towards measuring the overlay performance of the FLX-1200 is shown. We have exposed a wafer twice without unloading the wafer in between exposures. In the first exposure half of a dense dot array is exposed. In the second exposure the remainder of the dense dot array is exposed. After development the wafer has been inspected using a CD-SEM at 480 locations distributed over an area of 100mm x 100mm. For each SEM image the shift of the pattern written in the first exposure relative to the pattern written in the second exposure is measured. Cross wafer this shift is 7 nm u+3s in X and 5 nm u+3s in Y. The next step is to evaluate the impact of unloading and loading of the wafer in between exposures. At the conference the latest results will be presented.

Paper Details

Date Published: 27 April 2017
PDF: 1 pages
Proc. SPIE 10144, Emerging Patterning Technologies, 101440N (27 April 2017); doi: 10.1117/12.2260878
Show Author Affiliations
Ludovic Lattard, CEA-LETI (France)
Isabelle Servin, CEA-LETI (France)
Jonathan Pradelles, CEA-LETI (France)
Yoann Blancquaert, CEA-LETI (France)
Guido Rademaker, CEA-LETI (France)
Laurent Pain, CEA-LETI (France)
Guido de Boer, MAPPER Lithography (Netherlands)
Pieter Brandt, MAPPER Lithography (Netherlands)
Michel Dansberg, MAPPER Lithography (Netherlands)
Remco J. A. Jager, MAPPER Lithography (Netherlands)
Jerry J. M. Peijster, MAPPER Lithography (Netherlands)
Erwin Slot, MAPPER Lithography (Netherlands)
Stijn W. H. K. Steenbrink, MAPPER Lithography (Netherlands)
Niels Vergeer, MAPPER Lithography (Netherlands)
Marco Wieland, MAPPER Lithography (Netherlands)

Published in SPIE Proceedings Vol. 10144:
Emerging Patterning Technologies
Christopher Bencher, Editor(s)

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