Share Email Print

Proceedings Paper

Modeling high-frequency capacitance in SOI MOS capacitors
Author(s): Lidia Łukasiak; Jakub Jasiński; Romuald B. Beck; Fawzi A. Ikraiam
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

This paper presents a model of high frequency capacitance of a SOI MOSCAP. The capacitance in strong inversion is described with minority carrier redistribution in the inversion layer taken into account. The efficiency of the computational process is significantly improved. Moreover, it is suitable for the simulation of thin-film SOI structures. It may also be applied to the characterization of non-standard SOI MOSCAPS e.g. with nanocrystalline body.

Paper Details

Date Published: 22 December 2016
PDF: 6 pages
Proc. SPIE 10175, Electron Technology Conference 2016, 101750C (22 December 2016); doi: 10.1117/12.2260788
Show Author Affiliations
Lidia Łukasiak, Warsaw Univ. of Technology (Poland)
Jakub Jasiński, Warsaw Univ. of Technology (Poland)
Romuald B. Beck, Warsaw Univ. of Technology (Poland)
Fawzi A. Ikraiam, Omar Al-Mukhtar Univ. (Libya)

Published in SPIE Proceedings Vol. 10175:
Electron Technology Conference 2016
Barbara Swatowska; Wojciech Maziarz; Tadeusz Pisarkiewicz; Wojciech Kucewicz, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?