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Proceedings Paper

Simulation of electrical characteristics of GaN vertical Schottky diodes
Author(s): Lidia Łukasiak; Jakub Jasiński; Andrzej Jakubowski
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Paper Abstract

Reverse current of GaN vertical Schottky diodes is simulated using Silvaco ATLAS to optimize the geometry for the best performance. Several physical quantities and phenomena, such as carrier mobility and tunneling mechanism are studied to select the most realistic models. Breakdown voltage is qualitatively estimated based on the maximum electric field in the structure.

Paper Details

Date Published: 22 December 2016
PDF: 6 pages
Proc. SPIE 10175, Electron Technology Conference 2016, 101750B (22 December 2016); doi: 10.1117/12.2260777
Show Author Affiliations
Lidia Łukasiak, Warsaw Univ. of Technology (Poland)
Jakub Jasiński, Warsaw Univ. of Technology (Poland)
Andrzej Jakubowski, Warsaw Univ. of Technology (Poland)

Published in SPIE Proceedings Vol. 10175:
Electron Technology Conference 2016
Barbara Swatowska; Wojciech Maziarz; Tadeusz Pisarkiewicz; Wojciech Kucewicz, Editor(s)

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