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Proceedings Paper

Photoelectron scattering and acid release in EUV lithography: a simulation study (Conference Presentation)
Author(s): John J. Biafore

Paper Abstract

Abstract BACKGROUND: The ionizing wavelength in extreme ultraviolet (EUV) resist exposure leads to photoelectron scattering and uncertainty in the resulting acid image, producing line-edge roughness (LER) and poor CD uniformity of the printed features. GOALS: Try to determine how photoelectron and acid exposure blur effects affect EUV lithography and how they might be better controlled. Try to determine whether or not, and if so under what conditions, high resist quantum yields are beneficial to EUV lithography. METHODS: Using a stochastic resist simulator, we study the effects of resist properties upon photoelectric scattering, the uncertainty in the acid release and the properties of the after-development photoresist image in high NA EUV lithography. Uncertainty in the release of acids is the fundamental cause of LER and the ultimate limiter of optical lithography technology.

Paper Details

Date Published: 25 May 2017
PDF: 1 pages
Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 1014608 (25 May 2017); doi: 10.1117/12.2260475
Show Author Affiliations
John J. Biafore, KLA-Tencor Texas (United States)


Published in SPIE Proceedings Vol. 10146:
Advances in Patterning Materials and Processes XXXIV
Christoph K. Hohle, Editor(s)

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