Share Email Print

Proceedings Paper

Free-electron laser emission architecture impact on EUV lithography
Author(s): Erik R. Hosler; Obert R. Wood II; William A. Barletta
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Laser-produced plasma (LPP) EUV sources have demonstrated approximately 125 W at customer sites, establishing confidence in EUV lithography as a viable manufacturing technology. However, beyond the 7 nm technology node existing scanner/source technology must enable higher-NA imaging systems (requiring increased resist dose and providing half-field exposures) and/or EUV multi-patterning (requiring increased wafer throughput proportional to the number of exposure passes. Both development paths will require a substantial increase in EUV source power to maintain the economic viability of the technology, creating an opportunity for free-electron laser (FEL) EUV sources. FEL-based EUV sources offer an economic, high-power/single-source alternative to LPP EUV sources. Should free-electron lasers become the preferred next generation EUV source, the choice of FEL emission architecture will greatly affect its operational stability and overall capability.

A near-term industrialized FEL is expected to utilize one of the following three existing emission architectures: (1) selfamplified spontaneous emission (SASE), (2) regenerative amplification (RAFEL), or (3) self-seeding (SS-FEL). Model accelerator parameters are put forward to evaluate the impact of emission architecture on FEL output. Then, variations in the parameter space are applied to assess the potential impact to lithography operations, thereby establishing component sensitivity. The operating range of various accelerator components is discussed based on current accelerator performance demonstrated at various scientific user facilities. Finally, comparison of the performance between the model accelerator parameters and the variation in parameter space provides a means to evaluate the potential emission architectures. A scorecard is presented to facilitate this evaluation and provide a framework for future FEL design and enablement for EUV lithography applications.

Paper Details

Date Published: 31 March 2017
PDF: 12 pages
Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101431M (31 March 2017); doi: 10.1117/12.2260452
Show Author Affiliations
Erik R. Hosler, GLOBALFOUNDRIES Inc. (United States)
Obert R. Wood II, GLOBALFOUNDRIES Inc. (United States)
William A. Barletta, Massachusetts Institute of Technology (United States)

Published in SPIE Proceedings Vol. 10143:
Extreme Ultraviolet (EUV) Lithography VIII
Eric M. Panning, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?