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Proceedings Paper

Compact 2D OPC modeling of a metal oxide EUV resist for a 7nm node BEOL layer
Author(s): Adam Lyons; David Rio; Sook Lee; Thomas Wallow; Maxence Delorme; Anita Fumar-Pici; Michael Kocsis; Peter de Schepper; Michael Greer; Jason K. Stowers; Werner Gillijns; Danilo De Simone; Joost Bekaert
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Paper Abstract

Inpria has developed a directly patternable metal oxide hard-mask as a high-resolution photoresist for EUV lithography1. In this contribution, we describe a Tachyon 2D OPC full-chip model for an Inpria resist as applied to an N7 BEOL block mask application.

Paper Details

Date Published: 27 March 2017
PDF: 17 pages
Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101431E (27 March 2017); doi: 10.1117/12.2260441
Show Author Affiliations
Adam Lyons, ASML Brion (United States)
David Rio, ASML Brion (United States)
Sook Lee, ASML Brion (United States)
Thomas Wallow, ASML Brion (United States)
Maxence Delorme, ASML Brion (United States)
Anita Fumar-Pici, ASML Brion (United States)
Michael Kocsis, Inpria Corp. (United States)
Peter de Schepper, Inpria Corp. (United States)
Michael Greer, Inpria Corp. (United States)
Jason K. Stowers, Inpria Corp. (United States)
Werner Gillijns, IMEC (Belgium)
Danilo De Simone, IMEC (Belgium)
Joost Bekaert, IMEC (Belgium)

Published in SPIE Proceedings Vol. 10143:
Extreme Ultraviolet (EUV) Lithography VIII
Eric M. Panning, Editor(s)

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