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Proceedings Paper

Impact of EUV SRAF on Bossung tilt
Author(s): Yow-Gwo Wang; Stephen Hsu; Robert Socha; Andy Neureuther; Patrick Naulleau
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Paper Abstract

Mask 3D (M3D) effects remain a significant challenge affecting EUV lithography (EUVL) imaging performance due to the comparable sizes of the mask and the EUV wavelength. Pre-compensation with the insertion of sub-resolution assist features (SRAFs) has been proposed as a solution to compensate M3D effects and improve the process window for advanced technology nodes. In this paper, we discuss the possible positive impact of SRAFs on Bossung tilt, and provide physical insight into the optical mechanisms at play enabling M3D effect mitigation. In particular, we consider an example isolated 2-bar (CD = 16 nm) pattern imaged under delta function dipole illumination. We compare the scattered order distribution and Bossung tilt with and without SRAFs. The results show that SRAFs actually introduce stronger effective single pole aberrations in the imaging process. However, the opposite impacts on Bossung tilt from each pole results in an overall improvement for dipole illumination. Reduced Bossung tilt and a 21% improvement of the overlapping process window are achieved by the insertion of asymmetric SRAFs into the 2-bar mask design.

Paper Details

Date Published: 24 March 2017
PDF: 7 pages
Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 1014320 (24 March 2017); doi: 10.1117/12.2260160
Show Author Affiliations
Yow-Gwo Wang, Univ. of California, Berkeley (United States)
Lawrence Berkeley National Lab. (United States)
Stephen Hsu, ASML Brion (United States)
Robert Socha, ASML Brion (United States)
Andy Neureuther, Univ. of California, Berkeley (United States)
Lawrence Berkeley National Lab. (United States)
Patrick Naulleau, Lawrence Berkeley National Lab. (United States)

Published in SPIE Proceedings Vol. 10143:
Extreme Ultraviolet (EUV) Lithography VIII
Eric M. Panning, Editor(s)

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