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Proceedings Paper

Driving down defect density in composite EUV patterning film stacks
Author(s): Luciana Meli; Karen Petrillo; Anuja De Silva; John Arnold; Nelson Felix; Richard Johnson; Cody Murray; Alex Hubbard; Danielle Durrant; Koichi Hontake; Lior Huli; Corey Lemley; Dave Hetzer; Shinichiro Kawakami; Koichi Matsunaga
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Paper Abstract

Extreme ultraviolet lithography (EUVL) technology is one of the leading candidates for enabling the next generation devices, for 7nm node and beyond. As the technology matures, further improvement is required in the area of blanket film defectivity, pattern defectivity, CD uniformity, and LWR/LER. As EUV pitch scaling approaches sub 20 nm, new techniques and methods must be developed to reduce the overall defectivity, mitigate pattern collapse and eliminate film related defect. IBM Corporation and Tokyo Electron Limited (TELTM) are continuously collaborating to develop manufacturing quality processes for EUVL.

In this paper, we review key defectivity learning required to enable 7nm node and beyond technology. We will describe ongoing progress in addressing these challenges through track-based processes (coating, developer, baking), highlighting the limitations of common defect detection strategies and outlining methodologies necessary for accurate characterization and mitigation of blanket defectivity in EUV patterning stacks. We will further discuss defects related to pattern collapse and thinning of underlayer films.

Paper Details

Date Published: 28 March 2017
PDF: 11 pages
Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101430Y (28 March 2017); doi: 10.1117/12.2260146
Show Author Affiliations
Luciana Meli, IBM Corp. (United States)
Karen Petrillo, IBM Corp. (United States)
Anuja De Silva, IBM Corp. (United States)
John Arnold, IBM Corp. (United States)
Nelson Felix, IBM Corp. (United States)
Richard Johnson, IBM Corp. (United States)
Cody Murray, IBM Corp. (United States)
Alex Hubbard, IBM Corp. (United States)
Danielle Durrant, IBM Corp. (United States)
Koichi Hontake, Tokyo Electron Ltd. (United States)
Lior Huli, Tokyo Electron Ltd. (United States)
Corey Lemley, Tokyo Electron Ltd. (United States)
Dave Hetzer, Tokyo Electron Ltd. (United States)
Shinichiro Kawakami, Tokyo Electron Ltd. (United States)
Koichi Matsunaga, Tokyo Electron Ltd. (United States)

Published in SPIE Proceedings Vol. 10143:
Extreme Ultraviolet (EUV) Lithography VIII
Eric M. Panning, Editor(s)

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