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Proceedings Paper

Printability and actinic AIMS review of programmed mask blank defects
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Paper Abstract

We report on the printability, mitigation and actinic mask level review of programmed substrate blank pit and bump defects in a EUV lithography test mask. We show the wafer printing behavior of these defects exposed with an NXE:3300 EUV lithography scanner and the corresponding mask level actinic review using the AIMSTM tool. We will show which categories of these blank substrate defects print on wafer and how they can be mitigated by hiding these defects under absorber lines. Furthermore we show that actinic AIMSTM mask review images of these defects, in combination with a simple thresholded resist transfer model, can accurately predict their wafer printing profiles. We also compare mask level actinic AIMSTM to top down mask SEM review in their ability to detect these defects.

Paper Details

Date Published: 24 March 2017
PDF: 13 pages
Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101430K (24 March 2017); doi: 10.1117/12.2260053
Show Author Affiliations
Erik Verduijn, GLOBALFOUNDRIES Inc. (United States)
Pawitter Mangat, GLOBALFOUNDRIES Inc. (United States)
Obert Wood, GLOBALFOUNDRIES Inc. (United States)
Jed Rankin, GLOBALFOUNDRIES Inc. (United States)
Yulu Chen, GLOBALFOUNDRIES Inc. (United States)
Francis Goodwin, GLOBALFOUNDRIES Inc. (United States)
Renzo Capelli, Carl Zeiss SMT GmbH (Germany)
Sascha Perlitz, Carl Zeiss SMT GmbH (Germany)
Dirk Hellweg, Carl Zeiss SMT GmbH (Germany)
Ravi Bonam, IBM Corp. (United States)
Shravan Matham, IBM Corp. (United States)
Nelson Felix, IBM Corp. (United States)
Daniel Corliss, IBM Corp. (United States)

Published in SPIE Proceedings Vol. 10143:
Extreme Ultraviolet (EUV) Lithography VIII
Eric M. Panning, Editor(s)

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