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Proceedings Paper

Combined process window monitoring for critical features
Author(s): Carsten Hartig; Bernd Schulz; Robert Melzer; Matthias Ruhm; Daniel Fischer; Stefan Buhl; Boris Habets; Martin Rößiger; Manuela Gutsch
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Paper Abstract

After critical lithography steps, overlay and CD are measured to determine if the wafers need to be re-worked. Traditionally, overlay metrics are applied per X/Y-direction and, a CD metric is computed independently. From design standpoint, electrical failure is based on a complex interaction between CD deviations and overlay errors. We propose a method including design constraints, where results of different measurement steps are not judged individually, but in a combined way. We illustrate this with a critical design feature consisting of a contact requiring minimum distance to a neighboring metal line, resulting in much better correlation to yield than traditional methods.

Paper Details

Date Published: 28 March 2017
PDF: 14 pages
Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 101450U (28 March 2017); doi: 10.1117/12.2259910
Show Author Affiliations
Carsten Hartig, GLOBALFOUNDRIES Dresden (Germany)
Bernd Schulz, GLOBALFOUNDRIES Dresden (Germany)
Robert Melzer, GLOBALFOUNDRIES Dresden (Germany)
Matthias Ruhm, GLOBALFOUNDRIES Dresden (Germany)
Daniel Fischer, GLOBALFOUNDRIES Dresden (Germany)
Stefan Buhl, Qoniac GmbH (Germany)
Boris Habets, Qoniac GmbH (Germany)
Martin Rößiger, Qoniac GmbH (Germany)
Manuela Gutsch, Qoniac GmbH (Germany)

Published in SPIE Proceedings Vol. 10145:
Metrology, Inspection, and Process Control for Microlithography XXXI
Martha I. Sanchez, Editor(s)

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