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Proceedings Paper

Technology and characterization of Thin-Film Transistors (TFTs) with a-IGZO semiconductor and high-k dielectric layer
Author(s): R. Mroczyński; Ł. Wachnicki; S. Gierałtowska
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Paper Abstract

In this work, we present the design of the technology and fabrication of TFTs with amorphous IGZO semiconductor and high-k gate dielectric layer in the form of hafnium oxide (HfOx). In the course of this work, the IGZO fabrication was optimized by means of Taguchi orthogonal tables approach in order to obtain an active semiconductor with reasonable high concentration of charge carriers, low roughness and relatively high mobility. The obtained Thin-Film Transistors can be characterized by very good electrical parameters, i.e., the effective mobility (μeff ≈ 12.8 cm2V-1s-1) significantly higher than that for a-Si TFTs (μeff ≈ 1 cm2V-1s-1). However, the value of sub-threshold swing (i.e., 640 mV/dec) points that the interfacial properties of IGZO/HfOx stack is characterized by high value of interface states density (Dit) which, in turn, demands further optimization for future applications of the demonstrated TFT structures.

Paper Details

Date Published: 22 December 2016
PDF: 7 pages
Proc. SPIE 10175, Electron Technology Conference 2016, 101751A (22 December 2016); doi: 10.1117/12.2258741
Show Author Affiliations
R. Mroczyński, Wroclaw Univ. of Science and Technology (Poland)
Ł. Wachnicki, Institute of Physics (Poland)
S. Gierałtowska, Institute of Physics (Poland)

Published in SPIE Proceedings Vol. 10175:
Electron Technology Conference 2016
Barbara Swatowska; Wojciech Maziarz; Tadeusz Pisarkiewicz; Wojciech Kucewicz, Editor(s)

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