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Proceedings Paper

Minimizing wafer overlay errors due to EUV mask non-flatness and thickness variations for N7 production
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Paper Abstract

Wafer overlay errors due to EUV mask non-flatness and thickness variations need to be minimized for the successful deployment of EUV lithography at N7 HVM. In this paper, we provide an updated assessment of the overlay impacts from EUV mask blanks as relevant to N7. We then evaluate the effectiveness of high-order scanner correction and mask compensation in minimizing the mask blank induced overlay to meet the allocated N7 overlay budget. Various scenarios for combining the compensation methods are evaluated, and a practical EUV mask flatness and thickness variation specification for N7 production is proposed.

Paper Details

Date Published: 24 March 2017
PDF: 10 pages
Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101431F (24 March 2017); doi: 10.1117/12.2258642
Show Author Affiliations
Xuemei Chen, GLOBALFOUNDRIES Inc. (United States)
Christina Turley, GLOBALFOUNDRIES Inc. (United States)
Jed Rankin, GLOBALFOUNDRIES Inc. (United States)
Tim Brunner, GLOBALFOUNDRIES Inc. (United States)
Allen Gabor, GLOBALFOUNDRIES Inc. (United States)

Published in SPIE Proceedings Vol. 10143:
Extreme Ultraviolet (EUV) Lithography VIII
Eric M. Panning, Editor(s)

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