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Proceedings Paper

Required metrology and inspection for nanoimprint lithography
Author(s): Masafumi Asano; Hideaki Abe; Kazuto Matsuki; Ryoji Yoshikawa; Motofumi Komori; Takashi Hirano; Shinji Mikami; Yongho Kim; Eunhyuk Choi; Woo-Yung Jung
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Paper Abstract

We summarize the metrology and inspection required for the development of nanoimprint lithography (NIL), which is recognized as a candidate for next-generation lithography. Template inspection and residual layer thickness (RLT) metrology are discussed. An optical-based inspection tool for replica template inspection showed sensitivity for defects below 10 nm with sufficient throughput. For the RLT control, in-die RLT metrology is needed. Because the metrology requires dense sampling, optical scatterometry is the best solution owing to its ability to measure profile features nondestructively with high throughput. For in-die metrology, we have developed a new hybrid metrology that can combine key information from these complex geometries with scatterometry measurements to reduce the impact on the RLT measurement due to the layers beneath the resist. The technologies discussed here will be important when NIL is applied for IC manufacturing, as well as in the development phases of those lithography technologies.

Paper Details

Date Published: 28 March 2017
PDF: 6 pages
Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 101450J (28 March 2017); doi: 10.1117/12.2258369
Show Author Affiliations
Masafumi Asano, Toshiba Corp. (Japan)
Hideaki Abe, Toshiba Corp. (Japan)
Kazuto Matsuki, Toshiba Corp. (Japan)
Ryoji Yoshikawa, Toshiba Corp. (Japan)
Motofumi Komori, Toshiba Corp. (Japan)
Takashi Hirano, Toshiba Corp. (Japan)
Shinji Mikami, Toshiba Corp. (Japan)
Yongho Kim, SK Hynix, Inc. (Korea, Republic of)
Eunhyuk Choi, SK Hynix, Inc. (Korea, Republic of)
Woo-Yung Jung, Toshiba Corp. (Japan)

Published in SPIE Proceedings Vol. 10145:
Metrology, Inspection, and Process Control for Microlithography XXXI
Martha I. Sanchez, Editor(s)

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