Shrinking pattern sizes dictate that scanner-to-scanner variations for HVM products shrink proportionally. This paper shows the ability to identify (a subset of) root causes for mismatch between ArF immersion scanners using scanner metrology. The root cause identification was done in a Samsung HVM factory using a methodology (Proximity Matching Budget Breakdown or PromaBB) developed by ASML. The proper identification of root causes^-1 helps to select what combination of scanner control parameters should be used to reduce proximity differences of critical patterns while minimizing undesirable side effects from cross-compensation. Using PromaBB, the difference between predicted and measured CD mismatch was below 0.2nm. PromaBB has been proposed for HVM implementation at Samsung in combination with other ASML fab applications: Pattern Matcher Full Chip (PMFC), Image Tuner and FlexWave.

Date Published: 24 March 2017
PDF: 6 pages
Proc. SPIE 10147, Optical Microlithography XXX, 101470A (24 March 2017); doi: 10.1117/12.2258339

Published in SPIE Proceedings Vol. 10147:
Optical Microlithography XXX
Andreas Erdmann; Jongwook Kye, Editor(s)