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Proceedings Paper

Double-deprotected chemically amplified photoresists (DD-CAMP): higher-order lithography
Author(s): William Earley; Deanna Soucie; Kenji Hosoi; Arata Takahashi; Takashi Aoki; Brian Cardineau; Koichi Miyauchi; Jay Chun; Michael O'Sullivan; Robert Brainard
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Paper Abstract

The synthesis and lithographic evaluation of 193-nm and EUV photoresists that utilize a higher-order reaction mechanism of deprotection is presented. Unique polymers utilize novel blocking groups that require two acid-catalyzed steps to be removed. When these steps occur with comparable reaction rates, the overall reaction can be higher order (≤ 1.85). The LWR of these resists is plotted against PEB time for a variety of compounds to acquire insight into the effectiveness of the proposed higher-order mechanisms. Evidence acquired during testing of these novel photoresist materials supports the conclusion that higher-order reaction kinetics leads to improved LWR vs. control resists.

Paper Details

Date Published: 18 April 2017
PDF: 15 pages
Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 101460H (18 April 2017); doi: 10.1117/12.2258324
Show Author Affiliations
William Earley, SUNY Polytechnic Institute (United States)
Deanna Soucie, SUNY Polytechnic Institute (United States)
Kenji Hosoi, Central Glass Co., Ltd. (Japan)
Arata Takahashi, Central Glass Co., Ltd. (Japan)
Takashi Aoki, Central Glass Co., Ltd. (Japan)
Brian Cardineau, SUNY Polytechnic Institute (United States)
Koichi Miyauchi, Central Glass Co., Ltd. (Japan)
Jay Chun, SUNY Polytechnic Institute (United States)
Michael O'Sullivan, SUNY Polytechnic Institute (United States)
Robert Brainard, SUNY Polytechnic Institute (United States)

Published in SPIE Proceedings Vol. 10146:
Advances in Patterning Materials and Processes XXXIV
Christoph K. Hohle, Editor(s)

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